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| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-03 HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 E 0.75 0.15 2.54 0.25 2.54 0.25 1 23 3 * 4V DRIVE * VDSS ............................................................... -30V * rDS (ON) (MAX) ................................................ 0.13 * ID .................................................................... -20A * Integrated Fast Recovery Diode (TYP.) ...........50ns * Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings -30 20 -20 -80 -20 -20 -80 20 -55 ~ +150 -55 ~ +150 2000 2.0 4.5 0.2 Unit V V A A A A A W C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = -10V ID = -10A, VGS = -10V ID = -2A, VGS = -4V ID = -10A, VGS = -10V ID = -10A, VDS = -5V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.8 0.11 0.21 -1.1 5.8 1130 232 83 15 33 49 26 -1.0 -- 50 Max. -- 0.1 -0.1 -2.3 0.13 0.29 -1.3 -- -- -- -- -- -- -- -- -1.5 6.25 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -10A, VGS = -10V, RGEN = RGS = 50 IS = -10A, VGS = 0V Channel to case IS = -10A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -102 32 -7 -5 -3 -2 tw = 10s 24 -101 -7 -5 -3 -2 100s 1ms TC = 25C Pulse Set 10ms DC 16 8 -100 -7 -5 -3 -2 0 0 50 100 150 200 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -20 PD = 20W VGS = -10V -7V -8V OUTPUT CHARACTERISTICS (TYPICAL) -10 VGS = -10V -8V -6V -5V -6V DRAIN CURRENT ID (A) -16 DRAIN CURRENT ID (A) Tc = 25C Pulse Test -5V -8 Tc = 25C Pulse Test -12 -6 -4V -8 -4V -4 -4 -3V -2 -3V 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () Tc = 25C Pulse Test VGS = -4V Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -5.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) -4.0 0.32 -3.0 ID = -20A 0.24 -10V -2.0 -10A 0.16 -1.0 -5A 0.08 0 -10-1 -2 -3 -5 -7-100 -2 -3 -5- 7 -101 -2 -3 -5 -7-102 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -20 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 4 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) -12 FORWARD TRANSFER ADMITTANCE yfs (S) -16 100 7 5 4 3 2 -8 -4 VDS = -5V Pulse Test 0 0 -2 -4 -6 -8 -10 10-1 -3 -5 -7 -100 -2 -3 -5 -7 -101 -2 -3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 104 7 5 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Tch = 25C f = 1MHZ VGS = 0V Ciss 3 2 102 7 5 3 2 td(off) tf tr 103 7 5 3 2 Coss Crss 101 7 5 3 2 td(on) Tch = 25C VGS = -10V VDD = -15V RGEN = RGS = 50 102 7 5 3 2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 100 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 -5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20KMJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 SOURCE CURRENT IS (A) Tch = 25C ID = -20A -8 VDS = -10V -20V -25V -40 -6 -30 TC = 25C 75C 125C -4 -20 -2 -10 0 0 4 8 12 16 20 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 3 2 1.0 7 D = 1.0 5 0.5 0.2 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 0.8 100 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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